Jung‐Hee Lee

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

Ki-Won Kim, Sungdal Jung, Dong‐Seok Kim et al. · IEEE Electron Device Letters · 2011 · 167 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

Ki‐Sik Im, Jong‐Bong Ha, Ki-Won Kim et al. · IEEE Electron Device Letters · 2010 · 160 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition

Ho Won Jang, Jung‐Hee Lee, Jong‐Lam Lee · Applied Physics Letters · 2002 · 126 citations · Full text

Wide-bandgap Semiconductor, Aluminium Nitride, Engineering +16

High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

Ki‐Sik Im, Chul‐Ho Won, Young‐Woo Jo et al. · IEEE Transactions on Electron Devices · 2013 · 108 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Stress Reduction and Enhanced Extraction Efficiency of GaN-Based LED Grown on Cone-Shape-Patterned Sapphire

Jae‐Hoon Lee, Junghun Oh, Y.C. Kim et al. · IEEE Photonics Technology Letters · 2008 · 105 citations

Wide-bandgap Semiconductor, Engineering, High-quality Ingan–gan Film +18