Jae‐Hoon Lee - Concepedia

Author

Jae‐Hoon Lee

Samsung (South Korea)ORCID

Also Known As

Jae-Hoon Lee, Jae-hoon Lee, Jaehoon Lee, Jae‐Hoon Lee, Jung-Hee Lee, Lee, Jaehoon, S., Cristoloveanu

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

Samsung (South Korea)Kyungpook National University Pohang University of Science and Technology Kumoh National Institute of Technology Institut de Microélectronique, Electromagnétisme et Photonique

About

Jae‐Hoon Lee is an author at Samsung (South Korea) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	28	1.1K
2	Applied Physics	16	26	743
3	Medicine	1	1	18
4	Computer Engineering	1	1	179
5	Computer Science	1	1	179

Jae‐Hoon Lee

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications Young-Cheon Kwon, Suk Han Lee, Jae‐Hoon Lee, Artificial IntelligenceEngineeringEmerging Memory TechnologyHardware AlgorithmComputer Architecture	2021	179
The N = 8 $$ \mathcal{N}=8 $$ superconformal bootstrap in three dimensions Shai M. Chester, Jae‐Hoon Lee, Silviu S. Pufu, Journal of High Energy Physics	2014	158
Exact correlators of BPS Operators from the 3d superconformal bootstrap Shai M. Chester, Jae‐Hoon Lee, Silviu S. Pufu, Journal of High Energy Physics Spectral TheoryEngineeringRepresentation TheoryPhysicsExact Relations	2015	146
Stress Reduction and Enhanced Extraction Efficiency of GaN-Based LED Grown on Cone-Shape-Patterned Sapphire Jae‐Hoon Lee, Junghun Oh, Y.C. Kim, IEEE Photonics Technology Letters Wide-bandgap SemiconductorEngineeringHigh-quality Ingan–gan FilmGan-based Led GrownGan Layer	2008	105
Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes Wantae Lim, Jae-Hyun Jeong, Jae‐Hoon Lee, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringEngineeringLateral GeometryTemperature Dependence	2010	62
Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma Woo Jin Ha, Sameer Chhajed, Seung Jae Oh, Applied Physics Letters Wide-bandgap SemiconductorCf4 Plasma TreatmentElectrical EngineeringSemiconductor TechnologyEngineering	2012	56
AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature Jae‐Hoon Lee, Chanho Park, Ki‐Sik Im, IEEE Transactions on Electron Devices Active StructureWide-bandgap SemiconductorElectrical EngineeringEngineeringNanoelectronics	2013	43
Enhancement of InGaN-Based Vertical LED With Concavely Patterned Surface Using Patterned Sapphire Substrate Jae‐Hoon Lee, Jeong-Tak Oh, Seok-Boem Choi, IEEE Photonics Technology Letters EngineeringNormal Planar SurfaceOptoelectronic DevicesSemiconductorsOptical Properties	2008	43
Fabrication of AlGaN/GaN MIS‐HFET using an Al <sub>2</sub> O <sub>3</sub> high <i>k</i> dielectric Ki‐Yeol Park, Hyun‐Ick Cho, Jae‐Hoon Lee Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics Materials EngineeringSemiconductorsElectrical EngineeringAlgan/gan Mis‐hfetEngineering	2003	42
Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach Ki‐Sik Im, Sindhuri Vodapally, Young‐Woo Jo, Applied Physics Express	2015	38

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