Young‐Woo Jo

High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure

Ki‐Sik Im, Chul‐Ho Won, Young‐Woo Jo et al. · IEEE Transactions on Electron Devices · 2013 · 108 citations

Engineering, Electrical Engineering, Materials Science +16

AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch

Young‐Woo Jo, Dong-Hyeok Son, Chul‐Ho Won et al. · IEEE Electron Device Letters · 2015 · 71 citations

Engineering, Electrical Engineering, Materials Science +14

Heterojunction-Free GaN Nanochannel FinFETs With High Performance

Ki‐Sik Im, Young‐Woo Jo, Jaehoon Lee et al. · IEEE Electron Device Letters · 2013 · 69 citations

Engineering, Electrical Engineering, Materials Science +15

Low voltage operation of GaN vertical nanowire MOSFET

Dong-Hyeok Son, Young‐Woo Jo, Jae Hwa Seo et al. · Solid-State Electronics · 2018 · 40 citations

Engineering, Electrical Engineering, Materials Science +14

Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced <inline-formula> <tex-math notation="LaTeX">$I$ </tex-math> </inline-formula>–<inline-formula> <tex-math notation="LaTeX">$V$ </tex-math> </inline-formula> Characteristic for Switching Applications

Jae Hwa Seo, Young‐Woo Jo, Young Jun Yoon et al. · IEEE Electron Device Letters · 2016 · 38 citations

Engineering, Electrical Engineering, Materials Science +17