Jong‐Bong Ha

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

Injun Hwang, Jongseob Kim, Hyuk Choi et al. · IEEE Electron Device Letters · 2013 · 271 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

Ki-Won Kim, Sungdal Jung, Dong‐Seok Kim et al. · IEEE Electron Device Letters · 2011 · 167 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

Ki‐Sik Im, Jong‐Bong Ha, Ki-Won Kim et al. · IEEE Electron Device Letters · 2010 · 160 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Effect of oxygen species on the positive flat-band voltage shift in Al₂O₃/GaN metal–insulator–semiconductor capacitors with post-deposition annealing

Hee‐Sung Kang, M. Siva Pratap Reddy, Dong‐Seok Kim et al. · Journal of Physics D Applied Physics · 2013 · 63 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +14

Interface characterization of ALD deposited Al₂O₃ on GaN by CV method

Clemens Ostermaier, Hyundong Lee, S. Hyun et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 39 citations

Semiconductors, Materials Science, Electrical Engineering +13