Injun Hwang

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

Injun Hwang, Jongseob Kim, Hyuk Choi et al. · IEEE Electron Device Letters · 2013 · 271 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs

Injun Hwang, Jongseob Kim, Soogine Chong et al. · IEEE Electron Device Letters · 2013 · 112 citations

Wide-bandgap Semiconductor, Current Collapse Phenomenon, Electrical Engineering +10

Microwave Power Transfer With Optimal Number of Rectenna Arrays for Midrange Applications

Seung‐Tae Khang, Dong‐Jin Lee, Injun Hwang et al. · IEEE Antennas and Wireless Propagation Letters · 2017 · 90 citations

Wireless Communications, Engineering, Radio Frequency +16

Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

Injun Hwang, Jaejoon Oh, Hyuk Choi et al. · IEEE Electron Device Letters · 2013 · 52 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10

1.6kV, 2.9 mΩ cm<sup>2</sup> normally-off p-GaN HEMT device

Injun Hwang, Hyoji Choi, Jaewon Lee et al. · 2012 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si Substrate +9