Injun Hwang

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

Injun Hwang, Jongseob Kim, Hyuk Choi et al. · IEEE Electron Device Letters · 2013 · 283 citations

Engineering, Electrical Engineering, Materials Science +17

Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs

Injun Hwang, Jongseob Kim, Soogine Chong et al. · IEEE Electron Device Letters · 2013 · 114 citations

Engineering, Electrical Engineering, Materials Science +17

Microwave Power Transfer With Optimal Number of Rectenna Arrays for Midrange Applications

Seung‐Tae Khang, Dong‐Jin Lee, Injun Hwang et al. · IEEE Antennas and Wireless Propagation Letters · 2017 · 92 citations

Engineering, Electrical Engineering, Antennas +16

Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

Injun Hwang, Jaejoon Oh, Hyuk Choi et al. · IEEE Electron Device Letters · 2013 · 55 citations

Engineering, Electrical Engineering, Materials Science +13

1.6kV, 2.9 mΩ cm<sup>2</sup> normally-off p-GaN HEMT device

Injun Hwang, Hyoji Choi, Jaewon Lee et al. · 2012 · 38 citations

Engineering, Electrical Engineering, Materials Science +16