Jaejoon Oh

p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

Injun Hwang, Jongseob Kim, Hyuk Choi et al. · IEEE Electron Device Letters · 2013 · 271 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

Ki-Won Kim, Sungdal Jung, Dong‐Seok Kim et al. · IEEE Electron Device Letters · 2011 · 167 citations

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +13

Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs

Injun Hwang, Jongseob Kim, Soogine Chong et al. · IEEE Electron Device Letters · 2013 · 112 citations

Wide-bandgap Semiconductor, Current Collapse Phenomenon, Electrical Engineering +10

Two-bit cell operation in diode-switch phase change memory cells with 90nm technology

Dong‐Soo Kang, Ji‐Hyun Lee, J.H. Kong et al. · 2008 · 96 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

Injun Hwang, Jaejoon Oh, Hyuk Choi et al. · IEEE Electron Device Letters · 2013 · 52 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +10