p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current

Injun Hwang, Jongseob Kim, Hyuk Choi, +9

IEEE Electron Device Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering +12

Effects of TMAH Treatment on Device Performance of Normally Off $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{GaN}$ MOSFET

Ki-Won Kim, Sungdal Jung, Dong‐Seok Kim, +6

IEEE Electron Device Letters

Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringSimple Tetramethylammonium Hydroxide +11

Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs

Injun Hwang, Jongseob Kim, Soogine Chong, +5

IEEE Electron Device Letters

Wide-bandgap SemiconductorCurrent Collapse PhenomenonElectrical EngineeringChannel Hot ElectronsEngineering +8

Two-bit cell operation in diode-switch phase change memory cells with 90nm technology

Dong‐Soo Kang, Ji‐Hyun Lee, J.H. Kong, +13

Non-volatile MemoryEngineeringEmerging Memory TechnologyKey FactorsPhase Change Memory +14

Source-Connected p-GaN Gate HEMTs for Increased Threshold Voltage

Injun Hwang, Jaejoon Oh, Hyuk Choi, +6

IEEE Electron Device Letters

SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics +8

1.6kV, 2.9 mΩ cm<sup>2</sup> normally-off p-GaN HEMT device

Injun Hwang, Hyoji Choi, Jaewon Lee, +12

Wide-bandgap SemiconductorElectrical EngineeringSi SubstrateEngineeringApplied Physics +7

Extraction of Dynamic Threshold Voltage in Resistive Load Hard Switching Operation of Schottky-Type p-GaN Gate HEMT

Injun Hwang, Jaejoon Oh, Sun-Kyu Hwang, +4

IEEE Electron Device Letters

Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringSemiconductor Device +11

Characterization of traps and trap-related effects in recessed-gate normally-off AlGaN/GaN-based MOSHEMT

Jong‐Ho Bae, Injun Hwang, Jongmin Shin, +11

Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringPhysics +10

High threshold voltage p-GaN gate power devices on 200 mm Si

Jongseob Kim, Sun-Kyu Hwang, Injun Hwang, +16

Electrical EngineeringEngineeringPower DevicePower DevicesHigh Threshold Voltage +10

Writing current reduction and total set resistance analysis in PRAM

C.W. Jeong, Dae-Hwan Kang, Daewon Ha, +18

Solid-State Electronics

Electrical EngineeringCircuit AnalysisEngineeringResistorComputer Engineering +1