1.6kV, 2.9 mΩ cm<sup>2</sup> normally-off p-GaN HEMT device

Abstract

A p-GaN/AlGaN/GaN based normally-off HEMT device has been demonstrated on a Si substrate. Our p-GaN based device shows not only a high threshold voltage of 3 V but also low gate leakage current. Buffer and device breakdown voltages exceed 1600 V with 5.2 um GaN buffer thickness and specific on-state resistance is 2.9mΩ cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . The calculated figure of merit is 921 MV <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Ωcm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , which is the highest value reported for the GaN E-mode devices.