Changyong Um

Two-bit cell operation in diode-switch phase change memory cells with 90nm technology

Dong‐Soo Kang, Ji‐Hyun Lee, J.H. Kong et al. · 2008 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +14

MLC PRAM with SLC write-speed and robust read scheme

Y.N. Hwang, Changyong Um, Ji‐Hyun Lee et al. · 2010 · 47 citations

Engineering, Computer Engineering, Electrical Engineering +17

2.45 e-RMS Low-Random-Noise, 598.5 mW Low-Power, and 1.2 kfps High-Speed 2-Mp Global Shutter CMOS Image Sensor With Pixel-Level ADC and Memory

Min-Woong Seo, Hyun-Yong Jung, Suksan Kim et al. · IEEE Journal of Solid-State Circuits · 2022 · 47 citations

Engineering, Computer Engineering, Electrical Engineering +17

1.6kV, 2.9 mΩ cm<sup>2</sup> normally-off p-GaN HEMT device

Injun Hwang, Hyoji Choi, Jaewon Lee et al. · 2012 · 38 citations

Engineering, Electrical Engineering, Materials Science +16

A 2.6 e-rms Low-Random-Noise, 116.2 mW Low-Power 2-Mp Global Shutter CMOS Image Sensor with Pixel-Level ADC and In-Pixel Memory

Min-Woong Seo, Hyun-Yong Jung, Suksan Kim et al. · 2021 · 22 citations

Engineering, Computer Engineering, Electrical Engineering +17