Y.N. Hwang

A novel cell technology using N-doped GeSbTe films for phase change RAM

Hideki Horii, J.H. Yi, J.H. Park et al. · 2004 · 122 citations

Engineering, Electrical Engineering, Materials Science +17

Writing current reduction for high-density phase-change RAM

Y.N. Hwang, Sojung Lee, S.J. Ahn et al. · 2004 · 85 citations

Engineering, Electrical Engineering, Materials Science +16

Highly manufacturable high density phase change memory of 64Mb and beyond

Sung-Tae Ahn, Youjian Song, C.W. Jeong et al. · 2005 · 84 citations

Engineering, Electrical Engineering, Materials Science +16

Highly reliable 50nm contact cell technology for 256Mb PRAM

Sung-Tae Ahn, Y.N. Hwang, Youjian Song et al. · 2005 · 65 citations

Engineering, Electrical Engineering, Manufacturing Engineering +15

Peridynamic wetness approach for moisture concentration analysis in electronic packages

Cagan Diyaroglu, Selda Oterkus, Erkan Oterkus et al. · Microelectronics Reliability · 2017 · 48 citations

Agriculture, Electrical Engineering, Materials Engineering +15