Y.N. Hwang

A novel cell technology using N-doped GeSbTe films for phase change RAM

Hideki Horii, J.H. Yi, J.H. Park et al. · 2004 · 122 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Highly manufacturable high density phase change memory of 64Mb and beyond

Sung-Tae Ahn, Youjian Song, C.W. Jeong et al. · 2005 · 84 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Writing current reduction for high-density phase-change RAM

Y.N. Hwang, Sojung Lee, S.J. Ahn et al. · 2004 · 84 citations

Materials Science, Non-volatile Memory, Electrical Engineering +14

Highly reliable 50nm contact cell technology for 256Mb PRAM

Sung-Tae Ahn, Y.N. Hwang, Youjian Song et al. · 2005 · 64 citations

Engineering, Computer Architecture, Phase Change Memory +16

Peridynamic wetness approach for moisture concentration analysis in electronic packages

Cagan Diyaroglu, Selda Oterkus, Erkan Oterkus et al. · Microelectronics Reliability · 2017 · 48 citations

Electrical Engineering, Engineering, Desiccation +10