Hideki Horii

A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth

Youngdon Choi, Ickhyun Song, Mu-Hui Park et al. · 2012 · 309 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +14

A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes

Cheol Seong Hwang, Byong‐Taek Lee, Chang Seok Kang et al. · Journal of Applied Physics · 1998 · 169 citations

Engineering, Electrical Conduction Mechanisms, Charge Transport +17

Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films

Cheol Seong Hwang, Byong‐Taek Lee, Chang Seok Kang et al. · Journal of Applied Physics · 1999 · 142 citations

Engineering, Thin Film Process Technology, Electrical Conduction Properties +16

A novel cell technology using N-doped GeSbTe films for phase change RAM

Hideki Horii, J.H. Yi, J.H. Park et al. · 2004 · 122 citations

Materials Science, Materials Engineering, Electrical Engineering +14

A unified 7.5nm dash-type confined cell for high performance PRAM device

D.H. Im, J.I. Lee, S.L. Cho et al. · 2008 · 94 citations

Non-volatile Memory, Engineering, Computer Architecture +17