2008 · 96 citations · 4 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsElectronic MaterialsSemiconductor DevicesChemical Vapor DepositionNanostructured Electronic MaterialsQuantum ConfinementSemiconductor Device MaterialsSemiconductor NanomaterialsConfinement EffectsHigh PerformanceMemory Cell DesignNanoscale Confinement EffectsNanostructured SemiconductorsNon-volatile Memory DesignPhase-change Memory
We present a new-type confine structure within 7.5 nm width dash-contact for sub 20 nm generation PRAMs. Phase change material (PCM) by chemical vapor deposition (CVD) was perfectly filled in a 7.5 nm width dash-contact without void along with 30 nm depth. By adopting confined CVD-PCM, we were able to reduce the reset current below ~160 muA and to obtain high reliability. In addition, the programming time of dash-confined cell was much improved to 50 ns due to volume confinement of PCM cell. Consequently, we firstly demonstrate the high performance of the 7.5 nm width confined cell, which is the smallest size close to physical limit.
4
Highly manufacturable high density phase change memory of 64Mb and beyond
Sung-Tae Ahn, Youjian Song, C.W. Jeong et al. · 2005 · 84 citations
Highly Scalable Phase Change Memory with CVD GeSbTe for Sub 50nm Generation
J.I. Lee, Hae‐Sim Park, S.L. Cho et al. · 2007 · 76 citations
Natural Sciences, Materials Engineering, Materials Science +11
Highly scalable on-axis confined cell structure for high density PRAM beyond 256Mb