Chang Seok Kang - Concepedia

Author

Chang Seok Kang

The University of Texas at Austin

Also Known As

C. S. KANG, C. S. Kang, C.S. Kang, Chang S. Kang, Chang Seok Kang

Publications

2.5K

Citations

H-Index

Concepts

All Affiliations

The University of Texas at Austin Samsung (South Korea)Sungkyunkwan University Samsung Medical Center

About

Chang Seok Kang is an author at The University of Texas at Austin specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	27	43	2.3K
2	Applied Physics	27	43	2.3K
3	Medicine	3	3	128
4	Health Sciences	2	2	113
5	Natural Sciences	2	2	306

Chang Seok Kang

Publications

2.4K

Citations

H-Index

Page 1

	Year	Citations
Electrical and spectroscopic comparison of HfO2/Si interfaces on nitrided and un-nitrided Si(100) P. D. Kirsch, Chang Seok Kang, J. G. Lozano, Journal of Applied Physics EngineeringHigh-k Dielectric Hfo2ChemistrySilicon On InsulatorSpectroscopic Comparison	2002	263
A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes Cheol Seong Hwang, Byong‐Taek Lee, Chang Seok Kang, Journal of Applied Physics EngineeringElectrical Conduction MechanismsCharge TransportSemiconductorsFerroelectric Application	1998	169
Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics Chang Seok Kang, Hag-Ju Cho, Katsunori Onishi, Applied Physics Letters Materials ScienceElectrical EngineeringElectronic DevicesEngineeringSemiconductor Device	2002	160
Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films Cheol Seong Hwang, Byong‐Taek Lee, Chang Seok Kang, Journal of Applied Physics EngineeringThin Film Process TechnologyElectrical Conduction PropertiesSemiconductorsMocvd Films	1999	142
Bias-temperature instabilities of polysilicon gate HfO/sub 2/ MOSFETs K. Onishi, Rino Choi, Chang Seok Kang, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringPhysicsBti DegradationNanoelectronics	2003	118
Improvement of surface carrier mobility of HfO/sub 2/ MOSFETs by high-temperature forming gas annealing K. Onishi, Chang Seok Kang, Rino Choi, IEEE Transactions on Electron Devices Materials ScienceElectrical EngineeringEngineeringNanoelectronicsOxide Electronics	2003	103
The Electrical and Material Characterization of Hafnium Oxynitride Gate Dielectrics With TaN-Gate Electrode Chang Seok Kang, H.-J. Cho, Rino Choi, IEEE Transactions on Electron Devices EngineeringSilicon On InsulatorNanoelectronicsHafnium OxynitrideThin Film Processing	2004	103
Characterization of resistivity and work function of sputtered-TaN film for gate electrode applications Chang Seok Kang, H.-J. Cho, Y. H. Kim, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringWork FunctionThin Film Process TechnologySemiconductor DeviceGate Electrode Applications	2003	92
Deposition and Electrical Characterization of Very Thin SrTiO<sub>3</sub> Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application Cheol Seong Hwang, Soon Oh Park, Chang Seok Kang, Japanese Journal of Applied Physics Thin Film PhysicsEngineeringEmerging Memory TechnologyThin Film Process TechnologySrtio 3	1995	82
High-performance TaN/HfSiON/Si metal-oxide-semiconductor structures prepared by NH3 post-deposition anneal M.S. Akbar, Sundararaman Gopalan, H.-J. Cho, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringChemical EngineeringEngineering	2003	78

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