C.W. Jeong

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

J.H. Oh, J.H. Park, Yong Lim et al. · 2006 · 138 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

Highly manufacturable high density phase change memory of 64Mb and beyond

Sung-Tae Ahn, Youjian Song, C.W. Jeong et al. · 2005 · 84 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Highly reliable 50nm contact cell technology for 256Mb PRAM

Sung-Tae Ahn, Y.N. Hwang, Youjian Song et al. · 2005 · 64 citations

Engineering, Computer Architecture, Phase Change Memory +16

Highly Reliable 256Mb PRAM with Advanced Ring Contact Technology and Novel Encapsulating Technology

Yangkun Song, Kyung‐Chang Ryoo, Y.N. Hwang et al. · 2006 · 37 citations

Ring Type, Electrical Engineering, Highly Reliable 256Mb +15

Full integration and cell characteristics for 64Mb nonvolatile PRAM

Sung‐Chang Lee, Y.N. Hwang, Sangyoon Lee et al. · 2004 · 19 citations

Vertical Contact, Non-volatile Memory, Electrical Engineering +11