Kyung‐Chang Ryoo

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

J.H. Oh, J.H. Park, Yong Lim et al. · 2006 · 138 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate

Sungjun Kim, Sunghun Jung, Min‐Hwi Kim et al. · Small · 2018 · 100 citations

Highly manufacturable high density phase change memory of 64Mb and beyond

Sung-Tae Ahn, Youjian Song, C.W. Jeong et al. · 2005 · 84 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17

Writing current reduction for high-density phase-change RAM

Y.N. Hwang, Sojung Lee, S.J. Ahn et al. · 2004 · 84 citations

Materials Science, Non-volatile Memory, Electrical Engineering +14

Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

Yoon Kim, Jang-Gn Yun, Se Hwan Park et al. · IEEE Transactions on Electron Devices · 2011 · 77 citations