J.H. Park

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

J.H. Oh, J.H. Park, Yong Lim et al. · 2006 · 138 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

Two-bit cell operation in diode-switch phase change memory cells with 90nm technology

Dong‐Soo Kang, Ji‐Hyun Lee, J.H. Kong et al. · 2008 · 96 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +16

Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node

Woojin Kim, J. H. Jeong, Y. Kim et al. · 2011 · 93 citations

Engineering, Emerging Memory Technology, Stt Switching +17

Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic

Y. J. Song, J. H. Lee, S. H. Han et al. · 2018 · 86 citations

Hardware Security, Non-volatile Memory, Electrical Engineering +15

Highly manufacturable high density phase change memory of 64Mb and beyond

Sung-Tae Ahn, Youjian Song, C.W. Jeong et al. · 2005 · 84 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +17