J.H. Park

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

J.H. Oh, J.H. Park, Yong Lim et al. · 2006 · 139 citations

Engineering, Electrical Engineering, Materials Science +10

Two-bit cell operation in diode-switch phase change memory cells with 90nm technology

Dong‐Soo Kang, Ji‐Hyun Lee, J.H. Kong et al. · 2008 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +14

1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology

Kyoobin Lee, J. Bąk, Yeonji Kim et al. · 2019 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +17

Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node

Woojin Kim, J. H. Jeong, Y. Kim et al. · 2011 · 94 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic

Y. J. Song, J. H. Lee, S. H. Han et al. · 2018 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +14