J. H. Jeong is an author at Samsung (South Korea) specializing in engineering, microelectronics, and magnetoresistive random-access memory.
Top concepts
EngineeringMicroelectronicsMagnetoresistive Random-access MemoryPhysicsMagnetismSpintronicsMemory DevicesApplied PhysicsSpin-orbit TorqueComputer Engineering
Publications per year
2006–2023
7
7
Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node
Woojin Kim, J. H. Jeong, Y. Kim et al. · 2011 · 93 citations
On-axis scheme and novel MTJ structure for sub-30nm Gb density STT-MRAM
Sechang Oh, J. H. Jeong, W. C. Lim et al. · 2010 · 22 citations
28-nm 0.08 mm <sup>2</sup> /Mb Embedded MRAM for Frame Buffer Memory
S. H. Han, J. M. Lee, H. M. Shin et al. · 2020 · 19 citations
Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size
K. T. Nam, S. C. Oh, J. E. Lee et al. · 2006 · 17 citations
Non-volatile Memory, Engineering, Emerging Memory Technology +21
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