J. M. Lee

World-most energy-efficient MRAM technology for non-volatile RAM applications

Tae Young Lee, J. M. Lee, Min Kyu Kim et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 44 citations

Non-volatile Memory, Engineering, Energy Efficiency +18

Reduction of RESET current in phase change memory devices by carbon doping in GeSbTe films

J.H. Park, S.-W. Kim, J. H. Kim et al. · Journal of Applied Physics · 2015 · 40 citations

Materials Science, Materials Engineering, Electrical Engineering +11

Verification on the extreme scalability of STT-MRAM without loss of thermal stability below 15 nm MTJ cell

Ju Hyun Kim, W. C. Lim, Ung Hwan Pi et al. · 2014 · 22 citations

Non-volatile Memory, I-pma Mtj Cell, Engineering +16

28-nm 0.08 mm ² /Mb Embedded MRAM for Frame Buffer Memory

S. H. Han, J. M. Lee, H. M. Shin et al. · 2020 · 19 citations

Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film

J.H. Park, Seung Won Kim, J. H. Kim et al. · AIP Advances · 2016 · 12 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +13