Concepedia

K. T. Nam

KT

8

Publications

158

Citations

8

H-Index

2004

Active since

Affiliations

Samsung (South Korea)(Current)

K. T. Nam is an author at Samsung (South Korea) specializing in engineering, microelectronics, and magnetoresistive random-access memory.

Top concepts

EngineeringMagnetismSpintronicsApplied PhysicsMagnetic DeviceMicroelectronicsMagnetic ResonanceElectrical EngineeringMagnetoresistive Random-access MemoryMemory Devices

Publications per year

2004–2022

8

Publications

8

World-most energy-efficient MRAM technology for non-volatile RAM applications

Tae Young Lee, J. M. Lee, Min Kyu Kim et al. · 2022 International Electron Devices Meeting (IEDM) · 2022 · 44 citations

Non-volatile Memory, Engineering, Energy Efficiency +18

Magnetic properties of MBE‐grown Zn <sub> 1− <i>x</i> </sub> Cr <sub> <i>x</i> </sub> Te

Nobuhiko Ozaki, Nozomi Nishizawa, K. T. Nam et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2004 · 26 citations

28-nm 0.08 mm <sup>2</sup> /Mb Embedded MRAM for Frame Buffer Memory

S. H. Han, J. M. Lee, H. M. Shin et al. · 2020 · 19 citations

MRAM with novel shaped cell using synthetic anti-ferromagnetic free layer

Y.K. Ha, J.E. Lee, H.-J. Kim et al. · 2004 · 18 citations

Non-volatile Memory, Engineering, Magnetic Resonance +19

Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size

K. T. Nam, S. C. Oh, J. E. Lee et al. · 2006 · 17 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +21

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