MRAM with novel shaped cell using synthetic anti-ferromagnetic free layer

Abstract

Magnetic random access memory (MRAM) with magnetic tunnel junction (MTJ) using synthetic anti-ferromagnetic (SAF) free layers of various shapes has been developed. SAF free layers show the predominance in the scalability compared with a conventional single free layer. It is also revealed that a novel shaped MTJ with a SAF free layer has a remarkably large writing margin.