H.K. Kang

1Gbit High Density Embedded STT-MRAM in 28nm FDSOI Technology

Kyoobin Lee, J. Bąk, Yeonji Kim et al. · 2019 · 96 citations

Engineering, Computer Engineering, Electrical Engineering +17

PRAM cell technology and characterization in 20nm node size

Minjin Kang, Taegun Park, Yong-Jin Kwon et al. · 2011 · 95 citations

Engineering, Electrical Engineering, Materials Science +11

Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node

Woojin Kim, J. H. Jeong, Y. Kim et al. · 2011 · 94 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Demonstration of Highly Manufacturable STT-MRAM Embedded in 28nm Logic

Y. J. Song, J. H. Lee, S. H. Han et al. · 2018 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +14

Enhancement of data retention and write current scaling for sub-20nm STT-MRAM by utilizing dual interfaces for perpendicular magnetic anisotropy

Jeong-Heon Park, Y. Kim, W. C. Lim et al. · 2012 · 51 citations

Natural Sciences, Materials Engineering, Materials Science +14