PRAM cell technology and characterization in 20nm node size

Abstract

We reported characteristics of 20nm PRAM cell. Optimization of diode integration process and improved implantation technology were used to satisfy the required diode on-current (Ion) with low off-current (Ioff). Confined cell structure and novel bottom electrode (BE) materials were developed to reduce a reset current (Ireset) below 100uA. Using the advanced technologies, we successfully produced fully integrated 20nm node size PRAM device for the first time.