J. E. Lee

Improvement of resistive memory switching in NiO using IrO2

D. C. Kim, Myoung‐Jae Lee, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 193 citations

Materials Science, Nio Growth, Electrical Engineering +13

Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node

Woojin Kim, J. H. Jeong, Y. Kim et al. · 2011 · 93 citations

Engineering, Emerging Memory Technology, Stt Switching +17

Enhancement of data retention and write current scaling for sub-20nm STT-MRAM by utilizing dual interfaces for perpendicular magnetic anisotropy

Jeong-Heon Park, Y. Kim, W. C. Lim et al. · 2012 · 51 citations

High Thermal Stability, Non-volatile Memory, Engineering +21

On-axis scheme and novel MTJ structure for sub-30nm Gb density STT-MRAM

Sechang Oh, J. H. Jeong, W. C. Lim et al. · 2010 · 22 citations

Non-volatile Memory, Engineering, Current Density +22

Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size

K. T. Nam, S. C. Oh, J. E. Lee et al. · 2006 · 17 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +21