Statistics
Publications
5
Citations
377
H-Index
5
Active since
2006
Affiliations
Samsung (South Korea)(Current)
J. E. Lee is an author at Samsung (South Korea) specializing in materials science, microelectronics, and electronic materials.
Publications per year
2006–2012
5
5
Improvement of resistive memory switching in NiO using IrO2
D. C. Kim, Myoung‐Jae Lee, Seung‐Eon Ahn et al. · Applied Physics Letters · 2006 · 193 citations
Natural Sciences, Materials Engineering, Materials Science +16
Extended scalability of perpendicular STT-MRAM towards sub-20nm MTJ node
Woojin Kim, J. H. Jeong, Y. Kim et al. · 2011 · 94 citations
Natural Sciences, Electrical Engineering, Materials Science +17
On-axis scheme and novel MTJ structure for sub-30nm Gb density STT-MRAM
Sechang Oh, J. H. Jeong, W. C. Lim et al. · 2010 · 22 citations
Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size
K. T. Nam, S. C. Oh, J. E. Lee et al. · 2006 · 17 citations
Natural Sciences, Electrical Engineering, Materials Science +15
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