Jun-Youn Kim

Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

Jaekyun Kim, Yong-Hee Cho, Dong‐Su Ko et al. · Optics Express · 2014 · 74 citations · Full text

Wide-bandgap Semiconductor, Engineering, Luminescence Efficiency +20

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

Jaekyun Kim, Joosung Kim, Youngjo Tak et al. · IEEE Electron Device Letters · 2013 · 67 citations

Electrical Engineering, Engineering, Physics +15

Continuous Tuning and Efficient Intracavity Second-Harmonic Generation in a Semiconductor Disk Laser With an Intracavity Diamond Heatspreader

Alexander J. Maclean, Alan J. Kemp, S. Calvez et al. · IEEE Journal of Quantum Electronics · 2008 · 40 citations

Optical Materials, Engineering, Laser Science +22

Highly efficient InGaN/GaN blue LED on 8-inch Si (111) substrate

Jun-Youn Kim, Youngjo Tak, Jaekyun Kim et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2012 · 38 citations

1.6kV, 2.9 mΩ cm<sup>2</sup> normally-off p-GaN HEMT device

Injun Hwang, Hyoji Choi, Jaewon Lee et al. · 2012 · 37 citations

Wide-bandgap Semiconductor, Electrical Engineering, Si Substrate +9