Optics Express · 2014 · 76 citations · 36 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsDislocations In SemiconductorsLight-emitting DiodesQuantum WellsSemiconductor HeterostructuresSemiconductor PhysicsWide-bandgap SemiconductorsBarrier HeightsEfficiency DroopGallium Nitride Light-emitting DiodesInternal Quantum EfficiencyLight-emitting DevicesQuantum EfficiencyQuantum Well StructuresRadiative Recombination
We discuss the influence of V-pits and their energy barrier, originating from its facets of (101¯1) planes, on the luminescence efficiency of InGaN LEDs. Experimental analysis using cathodoluminescence (CL) exhibits that thin facets of V-pits of InGaN quantum wells (QWs) appear to be effective in improving the emission intensity, preventing the injected carriers from recombining non-radiatively with threading dislocations (TDs). Our theoretical calculation based on the self-consistent approach with adopting k⋅p method reveals that higher V-pit energy barrier heights in InGaN QWs more efficiently suppress the non-radiative recombination at TDs, thus enhancing the internal quantum efficiency (IQE).
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Natural Sciences, Electrical Engineering, Materials Science +17
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