Masatomo Sumiya - Concepedia

Author

Masatomo Sumiya

National Institute for Materials Science ORCID

Also Known As

M Sumiya, M. Sumiya, MASATOMO SUMIYA, Mahiya Akter Sumiya, Masatomo SUMIYA, Masatomo Sumiya, Sumiya, M., Sumiya, Masatomo

200

Publications

6.6K

Citations

H-Index

Concepts

All Affiliations

National Institute for Materials Science Shizuoka University University of Tsukuba Tokyo Institute of Technology The University of Tokyo

About

Masatomo Sumiya is an author at National Institute for Materials Science specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	69	5.1K
2	Applied Physics	32	67	5K
3	Chemical Engineering	5	5	128
4	Natural Sciences	4	4	123
5	Biomolecular Engineering	1	1	31

Masatomo Sumiya

Publications

5.4K

Citations

H-Index

Page 1

	Year	Citations
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO Atsushi Tsukazaki, Akira Ohtomo, Takeyoshi Onuma, Nature Materials P-type DopingElectrical EngineeringEngineeringOxide ElectronicsApplied Physics	2004	2.1K
Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy Dongsheng Li, Masatomo Sumiya, Shunro Fuke, Journal of Applied Physics Materials ScienceSemiconductorsSelective EtchingEngineeringPolar Surface	2001	346
Dependence of impurity incorporation on the polar direction of GaN film growth Masatomo Sumiya, K. Yoshimura, Kohji Ohtsuka, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorElectrical EngineeringAluminium NitrideEngineering	2000	173
Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on <i>c</i>-plane sapphire substrate Masatomo Sumiya, K. Yoshimura, Takahiro Ito, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorEngineeringSurface ScienceApplied Physics	2000	135
Review of polarity determination and control of GaN Masatomo Sumiya, Shunro Fuke MRS Internet Journal of Nitride Semiconductor Research	2004	130
Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy Masatomo Sumiya, M. Tanaka, Kohji Ohtsuka, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorEngineeringPhysicsSurface Science	1999	106
Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and N Atsushi Tsukazaki, Hideki Saito, Kentaro Tamura, Applied Physics Letters Materials ScienceLattice-matched Scalmgo4 SubstratesEngineeringCrystal Growth TechnologySystematic Examination	2002	101
Donor–acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice-matched ScAlMgO4 (0001) substrates Kentaro Tamura, T. Makino, Atsushi Tsukazaki, Solid State Communications Materials ScienceIi-vi SemiconductorOptical MaterialsEngineeringOxide Electronics	2003	100
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams Akira Uedono, Shigefusa F. Chichibu, Zhiyuan Chen, Journal of Applied Physics Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsGan Film GrownMonoenergetic Positron Beams	2001	99
Combinatorial synthesis of Li-doped NiO thin films and their transparent conducting properties U. S. Joshi, Yuji Matsumoto, Kenji Itaka, Applied Surface Science Materials EngineeringMaterials ScienceTransparent Conducting PropertiesEngineeringOxide Electronics	2006	92

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