IEEE Electron Device Letters · 2009 · 28 citations · 10 references
Nw ChannelElectrical EngineeringPerformance EnhancementEngineeringNanomaterialsNanotechnologyNanoelectronicsNanodevicesApplied PhysicsNanonetworkConduction MechanismPolycrystalline SiliconSemiconductor Device FabricationNanocomputingSilicon On InsulatorMicroelectronicsSemiconductor Device
A new method is proposed and successfully demonstrated for the fabrication of polycrystalline silicon (poly-Si) nanowire (NW) transistors with rectangular-shaped NW channels and two independent gates. The two independently controllable gates allow higher flexibility in device operation and provide a unique insight into the conduction mechanism of the NW device. Our results indicate that dramatic performance enhancement is feasible when the thickness of the NW channel is sufficiently thin, and the two conduction channels in the NW structure are operating simultaneously.
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Ultimately thin double-gate SOI MOSFETs
T. Ernst, S. Cristoloveanu, G. Ghibaudo et al. · IEEE Transactions on Electron Devices · 2003 · 244 citations
A folded-channel MOSFET for deep-sub-tenth micron era
Digh Hisamoto, Wen‐Chin Lee, J. Kedzierski et al. · 2002 · 241 citations
Low-power Electronics, Electrical Engineering, Quasi-planar Nature +12