Polycrystalline Silicon

Polycrystalline Silicon is a refined semiconductor material composed of multiple crystalline grains joined together, distinguished from monocrystalline and amorphous silicon by its intermediate structural order and grain boundary characteristics, widely used in photovoltaic and microelectronic applications.

3.3K

Publications

137.8K

Citations

9.4K

Authors

1.5K

Institutions

Publications per year

2017–2026

340

Variants

Poly-si

Authors

9.4K

  1. RT
    Roger T. Howe

    University of California, Berkeley, United States

    33 publications · 3.7K citations

    27

    h-index

  2. TI
    T. I. Kamins

    Hewlett-Packard (United States), United States

    30 publications · 2.7K citations

    24

    h-index

  3. MA
    Martin A. Green

    UNSW Sydney, Australia

    27 publications · 1.8K citations

    20

    h-index

  4. CD
    C.A. Dimitriadis

    Aristotle University of Thessaloniki, Greece

    35 publications · 1.3K citations

    20

    h-index

  5. GF
    G. Fortunato

    Institute for Microelectronics and Microsystems, Italy

    26 publications · 1.2K citations

    20

    h-index

1–5 of 9.4K

Venues

  1. Journal of Applied Physics

    450 publications · 25.3K citations

    70

    h-index

  2. Applied Physics Letters

    437 publications · 19.4K citations

    68

    h-index

  3. IEEE Transactions on Electron Devices

    179 publications · 8.6K citations

    49

    h-index

  4. Journal of The Electrochemical Society

    JES · 152 publications · 6.5K citations

    44

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 217 publications · 6.4K citations

    40

    h-index

1–5