G. Spadini

Transport properties of polycrystalline silicon films

G. Baccarani, B. Riccò, G. Spadini · Journal of Applied Physics · 1978 · 698 citations

Materials Science, Semiconductors, Engineering +12

Fundamental drift of parameters in chalcogenide phase change memory

I. V. Karpov, M. Mitra, D. Kau et al. · Journal of Applied Physics · 2007 · 181 citations

Semiconductors, Non-volatile Memory, Electrical Engineering +15

Evidence of field induced nucleation in phase change memory

I. V. Karpov, M. Mitra, D. Kau et al. · Applied Physics Letters · 2008 · 100 citations

Non-volatile Memory, Engineering, Nucleation Mechanism +9

Interpretation of C-V measurements for determining the doping profile in semiconductors

G. Baccarani, M. Rudan, G. Spadini et al. · Solid-State Electronics · 1980 · 37 citations

Device Modeling, Semiconductors, Electrical Engineering +7

Majority- and minority-carrier lifetime in MOS structures

G. Baccarani, C.A. Baffoni, M. Rudan et al. · Solid-State Electronics · 1975 · 10 citations

Physics, Minority-carrier Lifetime, Bias Temperature Instability +2