M. Rudan

A new discretization strategy of the semiconductor equations comprising momentum and energy balance

A. Forghieri, R. Guerrieri, P. Ciampolini et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1988 · 166 citations

Engineering, Computational Engineering, Electrical Engineering +17

MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES

M. Rudan, Fadwa Odeh · COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering · 1986 · 145 citations

Engineering, Electrical Engineering, Microelectronics +16

Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

Susanna Reggiani, M. Valdinoci, Luigi Colalongo et al. · IEEE Transactions on Electron Devices · 2002 · 134 citations

Engineering, Electrical Engineering, Materials Science +17

Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

Susanna Reggiani, Elena Gnani, A. Gnudi et al. · IEEE Transactions on Electron Devices · 2007 · 94 citations

Engineering, Electrical Engineering, Materials Science +17

Modeling electron and hole transport with full-band structure effects by means of the Spherical-Harmonics Expansion of the BTE

M.C. Vecchi, M. Rudan · IEEE Transactions on Electron Devices · 1998 · 86 citations

Engineering, Electrical Engineering, Physics +17