M. Rudan

A new discretization strategy of the semiconductor equations comprising momentum and energy balance

A. Forghieri, R. Guerrieri, P. Ciampolini et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1988 · 166 citations

Numerical Analysis, Engineering, Energy Balance +24

MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES

M. Rudan, Fadwa Odeh · COMPEL The International Journal for Computation and Mathematics in Electrical and Electronic Engineering · 1986 · 145 citations

Device Modeling, Numerical Analysis, Electrical Engineering +15

Electron and hole mobility in silicon at large operating temperatures. I. Bulk mobility

Susanna Reggiani, M. Valdinoci, Luigi Colalongo et al. · IEEE Transactions on Electron Devices · 2002 · 132 citations

Lattice Temperature, Engineering, Polar Expansions +18

Low-Field Electron Mobility Model for Ultrathin-Body SOI and Double-Gate MOSFETs With Extremely Small Silicon Thicknesses

Susanna Reggiani, Elena Gnani, A. Gnudi et al. · IEEE Transactions on Electron Devices · 2007 · 93 citations

Device Modeling, Electrical Engineering, Engineering +10

Modeling electron and hole transport with full-band structure effects by means of the Spherical-Harmonics Expansion of the BTE

M.C. Vecchi, M. Rudan · IEEE Transactions on Electron Devices · 1998 · 86 citations

Engineering, Hole Transport, Charge Transport +17