Transport properties of polycrystalline silicon films

Abstract

The transport properties of polycrystalline silicon films are examined and interpreted in terms of a modified grain-boundary trapping model. The theory has been developed on the assumption of both a δ-shaped and a uniform energy distribution of interface states. A comparison with experiments indicates that the interface states are nearly monovalent and peaked at midgap. Their density is 3.8×1012 cm−2, in accordance with carrier-lifetime measurements performed on CVD films.