Interpretation of C-V measurements for determining the doping profile in semiconductors

A self-consistent iterative scheme for one-dimensional steady state transistor calculations

H.K. Gummel · IEEE Transactions on Electron Devices · 1964 · 1.2K citations

Engineering, Electrical Engineering, Computational Physics +16

The influence of debye length on the C-V measurement of doping profiles

W. C. Johnson, P.T. Panousis · IEEE Transactions on Electron Devices · 1971 · 199 citations

Engineering, Electrical Engineering, Materials Science +17

Ion Implantation in Semiconductors

L. N. Large · Physics Bulletin · 1971 · 190 citations

Engineering, Electrical Engineering, Materials Science +15

On the Measurement of Impurity Atom Distributions in Silicon by the Differential Capacitance Technique

David P. Kennedy, P. C. Murley, W. Kleinfelder · IBM Journal of Research and Development · 1968 · 178 citations

Engineering, Electrical Engineering, Materials Science +17

Silicon Impurity Distribution as Revealed by Pulsed MOS C-V Measurements

W. van Gelder, E. H. Nicollian · Journal of The Electrochemical Society · 1971 · 121 citations

Engineering, Materials Engineering, Materials Science +14