IEEE Transactions on Nuclear Science · 1994 · 47 citations · 17 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesAbsorbed DoseDefects In Electronic MaterialsDevice CharacterizationDevice ReliabilityRadiation HardeningSemiconductor ReliabilityHardnessRadiation EffectsRadiation HardnessRadiation-hard DevicesRadiation-hard ElectronicsRadiation-hardened Integrated CircuitsRadiation-tolerant ElectronicsRadiation-tolerant Semiconductor Devices
The radiation hardness of commercial floating gate 256 K E/sup 2/PROMs from a single diffusion lot was observed to vary between 5 to 25 krad(Si) when irradiated at a low dose rate of 64 mrad(Si)/s. Additional variations in EEPROM hardness were found to depend on bias condition and failure mode (i.e., inability to read or write the memory), as well as the foundry at which the part was manufactured. This variability is related to system requirements, and it is shown that hardness level and variability affect the allowable mode of operation for EEPROMs in space applications. The radiation hardness of commercial 1-Mbit CMOS SRAMs from Micron, Hitachi, and Sony irradiated at 147 rad(Si)/s was approximately 12, 13, and 19 krad(Si), respectively. These failure levels appear to be related to increases in leakage current during irradiation. Hardness of SRAMs from each manufacturer varied by less than 20%, but differences between manufacturers are significant. The qualified manufacturer's list approach to radiation hardness assurance is suggested as a way to reduce variability and to improve the hardness level of commercial technologies.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
17
Physical Mechanisms Contributing to Device "Rebound"
J.R. Schwank, P.S. Winokur, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 360 citations