T.L. Meisenheimer - Concepedia

Author

T.L. Meisenheimer

Also Known As

T. L. Meisenheimer, T. Meisenheimer, T.L. Meisenheimer, TIMOTHY L. MEISENHEIMER, Timothy L. Meisenheimer, Timothy Meisenheimer

Publications

2.1K

Citations

H-Index

Concepts

All Affiliations

Sandia National Laboratories Sandia National Laboratories California Purdue University West Lafayette Vanderbilt University North Carolina State University

About

T.L. Meisenheimer is an author at Sandia National Laboratories specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	20	1.6K
2	Medicine	4	4	327
3	Health Sciences	2	2	205
4	Natural Sciences	1	1	22
5	Social Sciences	1	1	129

T.L. Meisenheimer

Publications

Citations

H-Index

Page 1

	Year	Citations
Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devices Daniel M. Fleetwood, P.S. Winokur, R.A. Reber, Journal of Applied Physics EngineeringIntegrated CircuitsDefect ToleranceOxide TrapsSemiconductor Device	1993	494
1/f noise and radiation effects in MOS devices Daniel M. Fleetwood, T.L. Meisenheimer, John H. Scofield IEEE Transactions on Electron Devices Trap EnergyElectrical EngineeringEngineeringRf SemiconductorNanoelectronics	1994	197
Border traps: Issues for MOS radiation response and long-term reliability Daniel M. Fleetwood, M.R. Shaneyfelt, W. L. Warren, Microelectronics Reliability Radiation DetectionHealth SciencesBias Temperature InstabilityApplied PhysicsRadiation Exposure	1995	178
Cyanide-induced neurotoxicity: Role of neuronal calcium Jerry D. Johnson, T.L. Meisenheimer, Gary E. Isom Toxicology and Applied Pharmacology NeurophysiologyCyanide-induced NeurotoxicityMedicineNeuropharmacologyToxicology	1986	129
1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices Daniel M. Fleetwood, M.J. Johnson, T.L. Meisenheimer, IEEE Transactions on Nuclear Science Electrical EngineeringOki Pmos TransistorsEngineeringPhysicsNanoelectronics	1997	100
Hardness assurance for low-dose space applications (MOS devices) Daniel M. Fleetwood, P.S. Winokur, T.L. Meisenheimer IEEE Transactions on Nuclear Science Hardness AssuranceCobalt-60 IrradiationElectrical EngineeringEngineeringMedicine	1991	93
Effect of radiation-induced charge on 1/f noise in MOS devices T.L. Meisenheimer, Daniel M. Fleetwood IEEE Transactions on Nuclear Science Electrical EngineeringOxide Trap ChargeEngineeringSemiconductor DevicePhysics	1990	86
Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics L. W. Massengill, B.K. Choï, Daniel M. Fleetwood, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringHeavy-ion-induced BreakdownStress-induced Leakage Current	2001	81
1/f noise in n- and p-channel MOS devices through irradiation and annealing T.L. Meisenheimer, Daniel M. Fleetwood, M.R. Shaneyfelt, IEEE Transactions on Nuclear Science Pmos TransistorsSemiconductor TechnologyElectrical EngineeringEngineeringNegative Bias Anneals	1991	78
Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance M. King, Xiaogang Wu, M. Eller, IEEE Transactions on Nuclear Science	2016	72

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