Proceedings of the IEEE · 1988 · 110 citations · 57 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice ModelingDevice SimulationIntegrated Circuit DesignRadiation Damage In MaterialsRadiation HardeningCmos Operational AmplifiersHeterojunction DevicesRadiation EffectsRadiation-hard DevicesRadiation-hard ElectronicsRadiation-hardened Integrated CircuitsRadiation-hardening TechniquesRadiation-tolerant Semiconductor Devices
Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ICs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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J.S. Brugler, P.G.A. Jespers · IEEE Transactions on Electron Devices · 1969 · 499 citations
Physical Mechanisms Contributing to Device "Rebound"
J.R. Schwank, P.S. Winokur, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 360 citations