Proceedings of the IEEE · 1988 · 109 citations · 57 references
EngineeringSpace EnvironmentEpi CmosIntegrated CircuitsSpace SystemSemiconductor DeviceRadiation ProtectionHigh-speed ElectronicsElectronic EngineeringIntegrated Circuit DesignComputational ElectromagneticsElectrical EngineeringRadiation-hard DesignComputer EngineeringSingle Event EffectsSemiconductor Device FabricationRadiation EffectsMicroelectronicsSpace RadiationAerospace EngineeringApplied PhysicsRadiation-hardened IcsSpace Engineering
Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ICs.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Physical Mechanisms Contributing to Device "Rebound"
J.R. Schwank, P.S. Winokur, P. J. McWhorter et al. · IEEE Transactions on Nuclear Science · 1984 · 358 citations