Reliability aspects of gate oxide under ESD pulse stress

Mechanism for stress-induced leakage currents in thin silicon dioxide films

D. J. DiMaria, E. Cartier · Journal of Applied Physics · 1995 · 546 citations

Engineering, Silicon On Insulator, Tunneling Microscopy +16

Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability

Ernest Y. Wu, J. Suñé · Microelectronics Reliability · 2005 · 151 citations

Electrical Engineering, Engineering, Nanoelectronics +9

Impact of technology scaling on the input and output features of RF-MOSFETs: effects and modeling

Reydezel Torres‐Torres, Roberto S. Murphy‐Arteaga, E. Augendre et al. · 2004 · 100 citations

Device Modeling, Electrical Engineering, Engineering +11

Hole injection oxide breakdown model for very low voltage lifetime extrapolation

K.F. Schuegraf, Chenming Hu · 1993 · 81 citations

Electrical Engineering, Engineering, Breakdown Model +14

Hot-electron reliability and ESD latent damage

S. Aur, Amitava Chatterjee, T. Polgreen · IEEE Transactions on Electron Devices · 1988 · 64 citations

Engineering, Glow Discharge, Hot-electron Reliability +19