Hole injection oxide breakdown model for very low voltage lifetime extrapolation

Abstract

An anode hole injection model for silicon dioxide breakdown characterization is presented. The model is valid for a large thickness range between 2.5 nm and at least 13 nm, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses. The model extrapolation predicts Q/sub BD/ and t/sub BD/ behavior including a fluence in excess of 10/sup 7/ C/cm/sup 2/ at V/sub ox/=2.4 V for a 2.5-nm oxide. Moreover, it is fully complementary with the well-known thick oxide 1/E model, while offering the ability to predict oxide reliability for low voltages.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>