Kai Esmark

Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry

D. Pogány, S. Bychikhin, C. Fürböck et al. · IEEE Transactions on Electron Devices · 2002 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Ultra-thin gate oxide reliability in the ESD time domain

Adrien Ille, Wolfgang Stadler, A. Kerber et al. · Electrical Overstress/Electrostatic Discharge Symposium · 2006 · 48 citations

Engineering, Electrical Engineering, Microelectronics +15

Reliability aspects of gate oxide under ESD pulse stress

Adrien Ille, Wolfgang Stadler, T. Pompl et al. · 2007 · 45 citations

Engineering, Electrical Engineering, Electronic Materials +13

Advanced 2D/3D ESD device simulation-a powerful tool already used in a pre-Si phase

Kai Esmark, Wolfgang Stadler, M. Wendel et al. · 2002 · 38 citations

Engineering, Electrical Engineering, Microelectronics +14

Wide range control of the sustaining voltage of ESD protection elements realized in a smart power technology

T. Müller-Lynch, Kai Esmark, M. Stecher · 2003 · 35 citations

Engineering, Electrical Engineering, Microelectronics +6