M. Stecher

A Temperature-Gradient-Induced Failure Mechanism in Metallization Under Fast Thermal Cycling

Tobias Smorodin, Jürgen Wilde, P. Alpern et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +17

Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry

D. Pogány, S. Bychikhin, C. Fürböck et al. · IEEE Transactions on Electron Devices · 2002 · 61 citations

Engineering, Electrical Engineering, Materials Science +17

Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

Susanna Reggiani, N. Jensen, G. Groos et al. · IEEE Transactions on Electron Devices · 2005 · 46 citations

Engineering, Electrical Engineering, Electronic Materials +16

Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress

M. Denison, M. Blaho, Pavel Rodin et al. · IEEE Transactions on Electron Devices · 2004 · 42 citations

Engineering, Electrical Engineering, Microelectronics +14

ESD protection considerations in advanced high-voltage technologies for automotive

M. Mergens, Michael Mayerhofer, Joost Willemen et al. · Electrical Overstress/Electrostatic Discharge Symposium · 2006 · 41 citations

Engineering, Automotive Engineering, Electrical Engineering +10