M. Stecher

On the Origin of Thermal Runaway in a Trench Power MOSFET

Donald Dibra, M. Stecher, Stefan Decker et al. · IEEE Transactions on Electron Devices · 2011 · 67 citations

Electrical Engineering, Power Mosfet, Engineering +12

A Temperature-Gradient-Induced Failure Mechanism in Metallization Under Fast Thermal Cycling

Tobias Smorodin, Jürgen Wilde, P. Alpern et al. · IEEE Transactions on Device and Materials Reliability · 2008 · 62 citations

Engineering, Severe Plastic Deformation, Root Cause +18

Quantitative internal thermal energy mapping of semiconductor devices under short current stress using backside laser interferometry

D. Pogány, S. Bychikhin, C. Fürböck et al. · IEEE Transactions on Electron Devices · 2002 · 60 citations

Total Energy, Engineering, Short Current Stress +18

Measurement and modeling of the electron impact-ionization coefficient in silicon up to very high temperatures

Susanna Reggiani, N. Jensen, G. Groos et al. · IEEE Transactions on Electron Devices · 2005 · 46 citations

Engineering, Silicon On Insulator, Semiconductor Device +19

Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress

M. Denison, M. Blaho, Pavel Rodin et al. · IEEE Transactions on Electron Devices · 2004 · 42 citations

Device Modeling, Electrical Engineering, Engineering +13