Pavel Rodin - Concepedia

Author

Pavel Rodin

Also Known As

P B Rodin, P. B. Rodin, P. Rodin, P.B Rodin, P.B. Rodin, Pavel B. Rodin, Pavel Rodin, Rodin P. B., Rodin, P., Rodin, Pavel

Publications

870

Citations

H-Index

Concepts

All Affiliations

Ioffe Institute Technische Universität Berlin Russian Academy of Sciences Physico-Technical Institute TU Wien

About

Pavel Rodin is an author at Ioffe Institute specializing in electrical engineering, engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	22	561
2	Electrical Engineering	15	21	550
3	Applied Physics	14	20	532
4	Computer Engineering	2	2	69
5	Medicine	1	1	31

Pavel Rodin

Publications

754

Citations

H-Index

Page 1

	Year	Citations
Novel Closing Switches Based on Propagation of Fast Ionization Fronts in Semiconductors I. V. Grekhov, S. V. Korotkov, Pavel Rodin IEEE Transactions on Plasma Science Electrical EngineeringIon ImplantationEngineeringPhysicsNanoelectronics	2008	70
Tunneling-assisted impact ionization fronts in semiconductors Pavel Rodin, Ute Ebert, Willem Hundsdorfer, Journal of Applied Physics	2002	56
Lateral current density fronts in globally coupled bistable semiconductors with S- or Z-shaped current voltage characteristics M. Meixner, Pavel Rodin, Eckehard Schöll, The European Physical Journal B SemiconductorsElectrical EngineeringBistable SemiconductorsEngineeringNanoelectronics	2000	52
Stability of current filaments in a bistable semiconductor system with global coupling Anton Alekseev, Sanjay K. Bose, Pavel Rodin, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics SemiconductorsGlobal CouplingElectrical EngineeringSemiconductor DeviceEngineering	1998	44
Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress M. Denison, M. Blaho, Pavel Rodin, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringIntegrated Dmos TransistorsStress-induced Leakage Current	2004	42
Breathing current domains in globally coupled electrochemical systems: A comparison with a semiconductor model F. Plenge, Pavel Rodin, Eckehard Schöll, Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics Spatio-temporal BifurcationsEngineeringTheoretical ElectrochemistryDifferent InstabilitiesCurrent Domains	2001	39
Stabilization of complex spatio-temporal dynamics near a subcritical Hopf bifurcation by time-delayed feedback M. Kehrt, Philipp Hövel, Valentín Flunkert, The European Physical Journal B Time Delay SystemStabilitySystem StabilityComplex Spatio-temporal DynamicsBifurcation Theory	2009	37
Field-enhanced ionization of deep-level centers as a triggering mechanism for superfast impact ionization fronts in Si structures Pavel Rodin, A. V. Rodina, I. V. Grekhov Journal of Applied Physics Wide-bandgap SemiconductorEngineeringIonization FrontSi StructuresSemiconductor Device	2005	37
Competing spatial and temporal instabilities in a globally coupled bistable semiconductor system near a codimension-two bifurcation Sanjay K. Bose, Pavel Rodin, Eckehard Schöll Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics AttractorPattern FormationNonlinear OscillationPhysicsChaos Theory	2000	31
Moving Current Filaments in Integrated DMOS Transistors Under Short-Duration Current Stress M. Denison, M. Blaho, Pavel Rodin, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringIntegrated Dmos TransistorsStress-induced Leakage Current	2004	27

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