Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates

Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study

K. Prabhakaran, T. Ogino · Surface Science · 1995 · 445 citations

Natural Sciences, Materials Engineering, Materials Science +12

Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2

F. W. Smith, G. Ghidini · Journal of The Electrochemical Society · 1982 · 293 citations

Natural Sciences, Chemistry, Materials Science +17

Nucleation and growth of atomic layer deposited HfO2 gate dielectric layers on chemical oxide (Si–O–H) and thermal oxide (SiO2 or Si–O–N) underlayers

M. L. Green, M.-Y. Ho, B. Busch et al. · Journal of Applied Physics · 2002 · 279 citations

Natural Sciences, Materials Engineering, Materials Science +17

Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

Hyoungsub Kim, Chi On Chui, Krishna C. Saraswat et al. · Applied Physics Letters · 2003 · 136 citations

Engineering, Materials Engineering, Materials Science +17

A TaN–<tex>$hbox HfO_2$</tex>–Ge pMOSFET With Novel<tex>$hbox SiH_4$</tex>Surface Passivation

Nan Wu, Q. Zhang, Chunxiang Zhu et al. · IEEE Electron Device Letters · 2004 · 111 citations

Engineering, Electrical Engineering, Materials Science +17