G. Ghidini - Concepedia

Author

G. Ghidini

STMicroelectronics (Italy)

Also Known As

G Ghidini, G. GHIDINI, G. Ghidini, Gabriella Ghidini

164

Publications

2.3K

Citations

H-Index

Concepts

All Affiliations

STMicroelectronics (Italy)University of Padua Istituto Nazionale di Fisica Nucleare, Sezione di Padova Politecnico di Milano Istituto Nazionale di Fisica Nucleare

About

G. Ghidini is an author at STMicroelectronics (Italy) specializing in engineering, applied physics, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	23	52	2K
2	Applied Physics	22	46	1.9K
3	Chemical Engineering	2	2	360
4	Chemistry	2	2	407
5	Natural Sciences	1	1	115

G. Ghidini

Publications

Citations

H-Index

Page 1

	Year	Citations
Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2 F. W. Smith, G. Ghidini Journal of The Electrochemical Society Materials ScienceInorganic ChemistryChemical EngineeringEngineeringCrystalline Defects	1982	292
Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides M. Ceschia, A. Paccagnella, Andrea Cester, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringSemiconductor DevicePhysics	1998	165
Ionizing radiation induced leakage current on ultra-thin gate oxides A. Scarpa, A. Paccagnella, F. Montera, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringPhysicsNanoelectronicsStress-induced Leakage Current	1997	156
Interaction of H 2 O with Si(111) and (100): Critical Conditions for the Growth of G. Ghidini, F. W. Smith Journal of The Electrochemical Society EngineeringSolid-state ChemistryChemistrySilicon On InsulatorSilicene	1984	115
Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electron or X-ray irradiation M. Ceschia, A. Paccagnella, Simone Sandrin, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringSemiconductor DevicePhysics	2000	76
A model of radiation induced leakage current (RILC) in ultra-thin gate oxides Luca Larcher, A. Paccagnella, M. Ceschia, IEEE Transactions on Nuclear Science Device ModelingTrap DistributionElectrical EngineeringEngineeringPhysics	1999	71
On the correlation between surface roughness and inversion layer mobility in Si-MOSFETs A. Pirovano, Andrea L. Lacaita, G. Ghidini, IEEE Electron Device Letters Afm MeasurementsEngineeringMicroscopySilicon On InsulatorNanotribology	2000	68
Structural, chemical and optical properties of cerium dioxide film prepared by atomic layer deposition on TiN and Si substrates S. Vangelista, Rossella Piagge, Satu Ek, Thin Solid Films Materials ScienceIi-vi SemiconductorChemical EngineeringOptical MaterialsCerium Dioxide Film	2017	68
Heavy ion irradiation of thin gate oxides M. Ceschia, A. Paccagnella, Mauro Turrini, IEEE Transactions on Nuclear Science Electrical EngineeringIon ImplantationEngineeringNanoelectronicsStress-induced Leakage Current	2000	60
Giant Random Telegraph Signals in Nanoscale Floating-Gate Devices Paolo Fantini, A. Ghetti, Andrea Marinoni, IEEE Electron Device Letters Trap SignatureCategoryquantum ElectronicsElectrical EngineeringSemiconductor DeviceEngineering	2007	53

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