Renaud Bonzom

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

Brice De Jaeger, Renaud Bonzom, Frederik Leys et al. · Microelectronic Engineering · 2005 · 96 citations

Engineering, Electrical Engineering, Materials Science +16

New interface state density extraction method applicable to peaked and high-density distributions for Ge MOSFET development

Koen Martens, Brice De Jaeger, Renaud Bonzom et al. · IEEE Electron Device Letters · 2006 · 72 citations

Engineering, Electrical Engineering, Materials Science +14

Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

Frederik Leys, Renaud Bonzom, B. Kaczer et al. · Materials Science in Semiconductor Processing · 2006 · 53 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxy solutions for Ge MOS technology

Frederik Leys, Renaud Bonzom, Roger Loo et al. · Thin Solid Films · 2005 · 24 citations

Engineering, Materials Engineering, Materials Science +14

Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates

Sven Van Elshocht, Matty Caymax, Thierry Conard et al. · Thin Solid Films · 2006 · 16 citations

Engineering, Materials Engineering, Materials Science +15