Frederik Leys

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

D.P. Brunco, Brice De Jaeger, Geert Eneman et al. · Journal of The Electrochemical Society · 2008 · 263 citations

Materials Science, Dislocation Densities, Electrical Engineering +11

High performance Ge pMOS devices using a Si-compatible process flow

Paul Zimmerman, G. Nicholas, Brice De Jaeger et al. · 2006 · 104 citations

Electrical Engineering, Engineering, Vlsi Design +15

Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n- and p-FETs on Ge-On-Insulator substrates

Brice De Jaeger, Renaud Bonzom, Frederik Leys et al. · Microelectronic Engineering · 2005 · 96 citations

Electrical Engineering, Epitaxial Growth, Engineering +9

Record I<inf>ON</inf>/I<inf>OFF</inf> performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability

Jérôme Mitard, Brice De Jaeger, Frederik Leys et al. · 2008 · 56 citations

Record Performance, Electrical Engineering, Engineering +9

Thin epitaxial Si films as a passivation method for Ge(100): Influence of deposition temperature on Ge surface segregation and the high-k/Ge interface quality

Frederik Leys, Renaud Bonzom, B. Kaczer et al. · Materials Science in Semiconductor Processing · 2006 · 53 citations

Materials Science, Ge Surface Segregation, Engineering +9