2012 · 23 citations · 4 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignComplementary Metal-oxide-semiconductor TechnologyEtching ProcessesIntegrated Circuit DesignInterconnect DesignInterconnect TechnologyVery-large-scale Integration Layout2.5D IntegrationHigh-density InterconnectsHigh-speed OperationInterposer TechnologyPlasma EtchingPower ConsumptionSiliconThrough-silicon Vias
In recent years, "2.5D silicon interposers" and "Full 3D stacked" technology for high-performance LSI has attracted much attention since this technology can solve interconnection problems using TSV (Through Silicon Via) to electrically connect stacked LSI. 2.5D and 3D Si integration has great advantages over conventional two-dimensional devices such as high packaging density, small wire length, high-speed operation, low power consumption, and high feasibility for parallel processing.
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High density 3D integration using CMOS foundry technologies for 28 nm node and beyond
Jason Lin, W.C. Chiou, K.F. Yang et al. · 2010 · 70 citations
A novel deep etching technology for Si and quartz materials
Yasuhiro Morikawa, Tooru Koidesawa, Toshio Hayashi et al. · Thin Solid Films · 2006 · 15 citations