Y. Mizushima

Schottky barrier height of <i>n</i>-In<i>x</i>Ga1−<i>x</i>As diodes

Kenji Kajiyama, Y. Mizushima, S. Sakata · Applied Physics Letters · 1973 · 282 citations

Barrier Heights φB, Semiconductor Technology, Electrical Engineering +9

Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts

Kazutoshi Nakajima, Takefumi Iida, Kenichi Sugimoto et al. · IEEE Transactions on Electron Devices · 1990 · 43 citations

Categoryquantum Electronics, Engineering, Optoelectronic Devices +17

Comparative study of side-wall roughness effects on leakage currents in through-silicon via interconnects

T. Nakamura, Hideki Kitada, Y. Mizushima et al. · 2012 · 42 citations

Electrical Engineering, Engineering, Advanced Packaging (Semiconductors) +14

Silicon avalanche photodiodes with low multiplication noise and high-speed response

H. Kanbe, T. Kimura, Y. Mizushima et al. · IEEE Transactions on Electron Devices · 1976 · 39 citations

Semiconductor Technology, Photonics, Electrical Engineering +15

Lattice-Dynamical Aspects in Photoexcited Chalcogenide Glasses

Y. Mizushima · Japanese Journal of Applied Physics · 1992 · 27 citations · Full text

Materials Science, Semiconductors, Optical Materials +15