Schottky barrier height of <i>n</i>-In<i>x</i>Ga1−<i>x</i>As diodes

Abstract

The barrier heights φB of Au/n-InxGa1−xAs diodes are measured by the capacitance-voltage and saturation current methods. The composition dependence of the barrier height is φB (eV) = 0.95 − 1.90x + 0.90x2. A low barrier height with a relatively wide band gap is obtained in this system.