Kenji Kajiyama - Concepedia

Author

Kenji Kajiyama

Also Known As

K Kajiyama, K. Kajiyama, KENJI KAJIYAMA, Kajiyama, K., Kazuki Kajiyama, Kazuyo KAJIYAMA, Kenichi Kajiyama, Kenji KAJIYAMA, Kenji Kajiyama, Kenji Kajiyama Kenji Kajiyama

106

Publications

1.5K

Citations

H-Index

Concepts

All Affiliations

NTT (Japan)Musashino University Ion Technology Center (Japan)The University of Osaka American Ceramic Society

About

Kenji Kajiyama is an author at NTT (Japan) specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	27	1.1K
2	Applied Physics	17	25	1K
3	Chemistry	4	4	95
4	Natural Sciences	3	3	72
5	Chemical Engineering	2	2	55

Kenji Kajiyama

Publications

1.3K

Citations

H-Index

Page 1

	Year	Citations
Schottky barrier height of <i>n</i>-In<i>x</i>Ga1−<i>x</i>As diodes Kenji Kajiyama, Y. Mizushima, S. Sakata Applied Physics Letters Barrier Heights φBSemiconductor TechnologyElectrical EngineeringSchottky Barrier HeightEngineering	1973	282
Fabrication of electromagnetic crystals with a complete diamond structure by stereolithography Soshu Kirihara, Yoshinari Miyamoto, Katsuhiro Takenaga, Solid State Communications Materials ScienceDiamond-like CarbonEngineeringPhysicsMicrofabrication	2002	98
Novel low-temperature recrystallization of amorphous silicon by high-energy ion beam Jyoji Nakata, Kenji Kajiyama Applied Physics Letters	1982	88
Vascular changes in hepatocellular carcinoma: correlation of radiologic and pathologic findings. Hiroshi Honda, Tsuyoshi Tajima, Kenji Kajiyama, American Journal of Roentgenology	1999	79
Surface Silicon Crystallinity and Anomalous Composition Profiles of Buried SiO<sub>2</sub> and Si<sub>3</sub>N<sub>4</sub> Layers Fabricated by Oxygen and Nitrogen Implantation in Silicon Satoshi Maeyama, Kenji Kajiyama Japanese Journal of Applied Physics EngineeringBuried Sio 2Integrated CircuitsSilicon On InsulatorSi 3	1982	70
In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As<sup>+</sup> Ion Implantation Jyoji Nakata, Mitsutoshi Takahashi, Kenji Kajiyama Japanese Journal of Applied Physics Ev Migration EnergyIon ImplantationEngineeringCrystalline DefectsPhysics	1981	57
Solid-phase lateral epitaxy of chemical-vapor-deposited amorphous silicon by furnace annealing Yasuo Kunii, Michiharu Tabe, Kenji Kajiyama Journal of Applied Physics EngineeringIntegrated CircuitsSilicon On InsulatorSolid-phase Lateral EpitaxyMolecular Beam Epitaxy	1983	57
Amorphous-Si/crystalline-Si facet formation during Si solid-phase epitaxy near Si/SiO2 boundary Yasuo Kunii, Michiharu Tabe, Kenji Kajiyama Journal of Applied Physics Materials ScienceEpitaxial GrowthEngineeringBoundary ConditionPhysics	1984	53
Concentration dependence of the gain spectrum in energy-transfer dye mixtures Tsuneo Urisu, Kenji Kajiyama Journal of Applied Physics Gain-spectrum PeakChemical EngineeringPhosphorescence ImagingEngineeringPhotochemistry	1976	41
Solid-Phase Epitaxy of CVD Amorphous Si Film on Crystalline Si Yasuo Kunii, Michiharu Tabe, Kenji Kajiyama Japanese Journal of Applied Physics Materials ScienceEpitaxial GrowthCrystalline SiEngineeringCrystalline Defects	1982	39

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