Jyoji Nakata

Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation

Jyoji Nakata · Physical review. B, Condensed matter · 1991 · 107 citations

Natural Sciences, Materials Engineering, Materials Science +17

Atomic configuration of the Er-O luminescence center in Er-doped GaAs with oxygen codoping

K. Takahei, Atsushi Taguchi, Y. Horikoshi et al. · Journal of Applied Physics · 1994 · 104 citations

Natural Sciences, Materials Engineering, Materials Science +17

Novel low-temperature recrystallization of amorphous silicon by high-energy ion beam

Jyoji Nakata, Kenji Kajiyama · Applied Physics Letters · 1982 · 88 citations

Engineering, Materials Engineering, Materials Science +17

In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As⁺ Ion Implantation

Jyoji Nakata, Mitsutoshi Takahashi, Kenji Kajiyama · Japanese Journal of Applied Physics · 1981 · 57 citations

Natural Sciences, Materials Science, Physics +16

NTT normal-conducting accelerating ring

A. Shibayama, Toyoki Kitayama, T. Hayasaka et al. · Review of Scientific Instruments · 1989 · 51 citations

Natural Sciences, Nuclear Engineering, Physics +12