In Situ Self Ion Beam Annealing of Damage in Si during High Energy (0.53 MeV–2.56 MeV) As⁺ Ion Implantation

Abstract

High energy As + ions have been implanted by a 2.5 MeV Van-de-Graaff accelerator. Implantation induced damage in silicon crystal is anomalously smaller than that estimated from the calculation for nuclear deposited energy density. The logarithm for observed damage degree depends linearly on the inverse absolute temperature of the wafer during implantation. The 0.18 eV activation energy coincides with the 0.18 eV migration energy for the doubly negative vacancy. The anomalously small damage is attributed to in situ recrystallization of damage assisted by migration of the doubly negative vacancy ( V - ) which is formed by high energy heavy ion implantation. As the wafer temperature is below 300°C, and activation energy is small, ordinary solid phase epitaxial regrowth does not occur.