K. Takahei

Intra-4<i>f</i>-shell luminescence excitation and quenching mechanism of Yb in InP

K. Takahei, Atsushi Taguchi, H. Nakagome et al. · Journal of Applied Physics · 1989 · 117 citations

Localized Excited State, Engineering, Crystal Growth Technology +17

Electrical properties of ytterbium-doped InP grown by metalorganic chemical vapor deposition

Peter Whitney, Kunihiko Uwai, H. Nakagome et al. · Applied Physics Letters · 1988 · 106 citations

Engineering, Ytterbium Impurities, Electrical Properties +17

Atomic configuration of the Er-O luminescence center in Er-doped GaAs with oxygen codoping

K. Takahei, Atsushi Taguchi, Y. Horikoshi et al. · Journal of Applied Physics · 1994 · 104 citations

Aluminium Nitride, Engineering, Er Center +17

V-grooved substrate buried heterostructure InGaAsP/InP laser

Hiroshi Ishikawa, H. Imai, T. Tanahashi et al. · Electronics Letters · 1981 · 70 citations

Photonics, Peak Shift, Damped Relaxation Oscillation +13

Liquid phase epitaxy and characterization of rare-earth-ion (Yb, Er) doped InP

H. Nakagome, K. Takahei, Yoshikazu Homma · Journal of Crystal Growth · 1987 · 69 citations

Materials Science, Engineering, Applied Physics +4